![Radiation-hardened and repairable integrated circuits based on carbon nanotube transistors with ion gel gates | Nature Electronics Radiation-hardened and repairable integrated circuits based on carbon nanotube transistors with ion gel gates | Nature Electronics](https://media.springernature.com/lw685/springer-static/image/art%3A10.1038%2Fs41928-020-0465-1/MediaObjects/41928_2020_465_Fig4_HTML.png)
Radiation-hardened and repairable integrated circuits based on carbon nanotube transistors with ion gel gates | Nature Electronics
![Radiation Hardening by Design (RHBD) Analog Integrated Circuits (River Publishers Series in Electronic Materials and Devices): Gatti, Umberto, Calligaro, Cristiano: 9788770224192: Amazon.com: Books Radiation Hardening by Design (RHBD) Analog Integrated Circuits (River Publishers Series in Electronic Materials and Devices): Gatti, Umberto, Calligaro, Cristiano: 9788770224192: Amazon.com: Books](https://m.media-amazon.com/images/I/61HQyqP+t0S._AC_UF1000,1000_QL80_.jpg)
Radiation Hardening by Design (RHBD) Analog Integrated Circuits (River Publishers Series in Electronic Materials and Devices): Gatti, Umberto, Calligaro, Cristiano: 9788770224192: Amazon.com: Books
![Radiation Hardening by the Modification of Shallow Trench Isolation Process in Partially Depleted SOI MOSFETs | Semantic Scholar Radiation Hardening by the Modification of Shallow Trench Isolation Process in Partially Depleted SOI MOSFETs | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/31ce8be8cf88ea9774bd9f9c902b7e413e663bbb/2-Figure1-1.png)
Radiation Hardening by the Modification of Shallow Trench Isolation Process in Partially Depleted SOI MOSFETs | Semantic Scholar
![Electronics | Free Full-Text | Heavy-Ion Induced Single Event Upsets in Advanced 65 nm Radiation Hardened FPGAs Electronics | Free Full-Text | Heavy-Ion Induced Single Event Upsets in Advanced 65 nm Radiation Hardened FPGAs](https://www.mdpi.com/electronics/electronics-08-00323/article_deploy/html/images/electronics-08-00323-g001-550.jpg)
Electronics | Free Full-Text | Heavy-Ion Induced Single Event Upsets in Advanced 65 nm Radiation Hardened FPGAs
![Radiation hardening in deep space · Issue #8 · ExponentialDeepSpace/exponentialdeepspace.github.io · GitHub Radiation hardening in deep space · Issue #8 · ExponentialDeepSpace/exponentialdeepspace.github.io · GitHub](https://user-images.githubusercontent.com/1320252/106872576-6b293d80-670e-11eb-87d4-11a3dd45e3b1.png)
Radiation hardening in deep space · Issue #8 · ExponentialDeepSpace/exponentialdeepspace.github.io · GitHub
![Design Flow Methodology for Radiation Hardened by Design CMOS Enclosed-Layout-Transistor-Based Standard-Cell Library | SpringerLink Design Flow Methodology for Radiation Hardened by Design CMOS Enclosed-Layout-Transistor-Based Standard-Cell Library | SpringerLink](https://media.springernature.com/lw685/springer-static/image/art%3A10.1007%2Fs10836-018-5760-7/MediaObjects/10836_2018_5760_Fig1_HTML.png)